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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | MPS8098_D26Z |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 150 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power - Max [Max] | 625 mW |
| Supplier Device Package | TO-92-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
MPS8098 Series
NPN Bipolar Small Signal Transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) | Mounting Type | Package / Case | Frequency - Transition | Supplier Device Package | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 100 | 625 mW | 500 mA | 60 V | Through Hole | Formed Leads TO-226-3 TO-92-3 Long Body | 150 MHz | TO-92 | TO-226 | 400 mV | NPN | -55 °C | 150 °C | 100 nA | |
ON Semiconductor | 100 | 625 mW | 500 mA | Through Hole | Formed Leads TO-226-3 TO-92-3 Long Body | 150 MHz | TO-92 | TO-226 | 400 mV | NPN | -55 °C | 150 °C | 100 nA | 80 V | |
 ON Semiconductor | 100 | 625 mW | 500 mA | Through Hole | TO-226-3 TO-92-3 Long Body | 150 MHz | TO-92 | TO-226 | 400 mV | NPN | -55 °C | 150 °C | 100 nA | 80 V | |
ON Semiconductor | 100 | 625 mW | 500 mA | 60 V | Through Hole | TO-226-3 TO-92-3 Long Body | 150 MHz | TO-92 | TO-226 | 400 mV | NPN | -55 °C | 150 °C | 100 nA | |
ON Semiconductor | 100 | 625 mW | 500 mA | 60 V | Through Hole | TO-226-3 TO-92-3 | 150 MHz | TO-92-3 | 400 mV | NPN | -55 °C | 150 °C | 100 nA | ||
ON Semiconductor |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MPS8098 Series
The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
Documents
Technical documentation and resources