Discrete Semiconductor Products

FGF65A3H

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FIELD STOP IGBT WITH FRD 650V/30

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Discrete Semiconductor Products

Active

FIELD STOP IGBT WITH FRD 650V/30

Technical Specifications

Parameters and characteristics for this part

Specification	FGF65A3H

Current - Collector (Ic) (Max) [Max]	50 A
Current - Collector Pulsed (Icm)	90 A
Gate Charge	60 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-3P-3 Full Pack
Power - Max [Max]	72 W
Reverse Recovery Time (trr)	50 ns
Supplier Device Package	TO-3PF
Switching Energy	400 µJ, 500 µJ
Td (on/off) @ 25°C	30 ns, 90 ns
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2.73 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Mounting Type	Gate Charge	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Package / Case	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Operating Temperature	IGBT Type	Supplier Device Package	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic [Max]
Sanken Electric USA Inc. FGF65A4L	Through Hole	75 nC	72 W	1.96 V	TO-3P-3 Full Pack	100 ns	40 ns	60 ns	65 A	120 A	10 Ohm 15 V 40 A 400 V	650 V	900 µJ 900 µJ	175 °C	Trench Field Stop	TO-3PF
Sanken Electric USA Inc. FGF65A3H	Through Hole	60 nC	72 W	2.73 V	TO-3P-3 Full Pack			50 ns	50 A	90 A	10 Ohm 15 V 30 A 400 V	650 V	400 µJ 500 µJ	175 °C	Trench Field Stop	TO-3PF	30 ns 90 ns
Sanken Electric USA Inc. FGF65A3L	Through Hole	60 nC	72 W		TO-3P-3 Full Pack			50 ns	50 A	90 A	10 Ohm 15 V 30 A 400 V	650 V	600 µJ 600 µJ	175 °C	Trench Field Stop	TO-3PF	30 ns 90 ns	1.96 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT Trench Field Stop 650 V 50 A 72 W Through Hole TO-3PF

Technical documentation and resources