Discrete Semiconductor Products

PHD23NQ10T,118

Obsolete

MOSFET N-CH 100V 23A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 23A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD23NQ10T,118

Current - Continuous Drain (Id) (Tc)	23 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	1187 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	100 W
Rds On (Max)	70 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	FET Type	Current - Continuous Drain (Id) (Tc)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package Name	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Package / Case
NXP USA Inc. PHD23NQ10T,118	N-Channel	23 A	MOSFET (Metal Oxide)	-55 °C	175 °C	1187 pF	DPak	70 mOhm	10 V	4 V	100 V	22 nC	20 V	100 W	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

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General part information

N-Channel 100 V 23A (Tc) 100W (Tc) Surface Mount DPAK

Technical documentation and resources