Discrete Semiconductor Products

PHD23NQ10T,118

Obsolete

MOSFET N-CH 100V 23A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 23A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD23NQ10T,118

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1187 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PHD23NQ10T,118	1187 pF	MOSFET (Metal Oxide)	100 W	70 mOhm	DPAK	N-Channel	20 V	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	Surface Mount	-55 °C	175 ░C	23 A	22 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 23A (Tc) 100W (Tc) Surface Mount DPAK

Technical documentation and resources