Specification	CSD16325Q5

Current - Continuous Drain (Id) @ 25°C	100 A, 33 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	3 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.4 V

CSD16325Q5 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD16325Q5	8-VSON-CLIP (5x6)	25 nC	10 V	-8 V	8 V	3 V	8-PowerTDFN	1.4 V	2 mOhm	3.1 W	MOSFET (Metal Oxide)	N-Channel	Surface Mount	25 V	-55 °C	150 °C	4000 pF	33 A 100 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Technical documentation and resources