Specification	MTP23P06V

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	90 W
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

MTP23P06V Series

Power MOSFET 23 Amps, 60 Volts

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type
ON Semiconductor MTP23P06V	23 A	4 V	MOSFET (Metal Oxide)	TO-220	60 V	TO-220-3	90 W	-55 °C	175 ░C	Through Hole	1620 pF	15 V	50 nC	10 V	P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MTP23P06V Series

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Documents

Technical documentation and resources

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing