Discrete Semiconductor Products

SI6466ADQ-T1-GE3

Obsolete

MOSFET N-CH 20V 6.8A 8TSSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 6.8A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6466ADQ-T1-GE3

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	450 mV

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	FET Type	Package / Case	Package / Case [custom]	Package / Case [custom]	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI6466ADQ-T1-GE3	-55 °C	150 °C	2.5 V 4.5 V	14 mOhm	8 V	8-TSSOP	N-Channel	8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	20 V	Surface Mount	27 nC	450 mV
Vishay General Semiconductor - Diodes Division SI6466ADQ-T1-E3	-55 °C	150 °C	2.5 V 4.5 V	14 mOhm	8 V	8-TSSOP	N-Channel	8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	20 V	Surface Mount	27 nC	450 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 6.8A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available