
Discrete Semiconductor Products
GI250-1-E3/54
ActiveVishay General Semiconductor - Diodes Division
0.25A,1000V,SUPERTNOT FOR NEW DESIGN
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Discrete Semiconductor Products
GI250-1-E3/54
ActiveVishay General Semiconductor - Diodes Division
0.25A,1000V,SUPERTNOT FOR NEW DESIGN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GI250-1-E3/54 |
|---|---|
| Capacitance @ Vr, F | 3 pF |
| Current - Average Rectified (Io) | 250 mA |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-204AL, DO-41, Axial |
| Reverse Recovery Time (trr) | 2 µs |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-204AL (DO-41) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
GI250 Series
Diode 1000 V 250mA Through Hole DO-204AL (DO-41)
Documents
Technical documentation and resources