Discrete Semiconductor Products

1N3889

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DIODE GEN PURP 50V 12A DO4

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Discrete Semiconductor Products

Active

DIODE GEN PURP 50V 12A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N3889

Current - Average Rectified (Io)	12 A
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Reverse Recovery Time (trr)	200 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Reverse Recovery Time (trr)	Technology	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
GeneSiC Semiconductor 1N3889	150 °C	-65 C	200 mA 500 ns	200 ns	Standard	1.4 V	DO-4	Chassis Stud Mount	12 A	DO-203AA DO-4 Stud	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 12A Chassis, Stud Mount DO-4

Technical documentation and resources