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STMICROELECTRONICS SCTH90N65G2V-7
Discrete Semiconductor Products

NVBG040N120SC1

Active
ON Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 60 A, 1.2 KV, 0.04 OHM, TO-263HV (D2PAK)

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STMICROELECTRONICS SCTH90N65G2V-7
Discrete Semiconductor Products

NVBG040N120SC1

Active
ON Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 60 A, 1.2 KV, 0.04 OHM, TO-263HV (D2PAK)

Technical Specifications

Parameters and characteristics for this part

SpecificationNVBG040N120SC1
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs106 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1789 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)357 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs56 mOhm
Supplier Device PackageD2PAK-7
Vgs (Max) [Max]25 V
Vgs (Max) [Min]-15 V
Vgs(th) (Max) @ Id4.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 26.32
10$ 23.38
100$ 20.45
Digi-Reel® 1$ 26.32
10$ 23.38
100$ 20.45
Tape & Reel (TR) 800$ 17.45
NewarkEach (Supplied on Cut Tape) 1$ 33.65
10$ 28.72
25$ 28.30
50$ 28.09
100$ 26.88
250$ 26.60
500$ 26.31
1600$ 25.86
ON SemiconductorN/A 1$ 14.39

Description

General part information

NVBG040N120SC1 Series

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced