INTEGRATED SILICON SOLUTION / ISSI IS61WV102416FBLL-10BLI

Integrated Circuits (ICs)

IS62WV1288FBLL-45TLI

Active

ISSI, Integrated Silicon Solution Inc

SRAM, ASYNCHRONOUS SRAM, LPSRAM, 1 MBIT, 128K X 8BIT, TSOP, 32 PINS, 2.2 V

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN

Integrated Circuits (ICs)

IS62WV1288FBLL-45TLI

Active

ISSI, Integrated Silicon Solution Inc

SRAM, ASYNCHRONOUS SRAM, LPSRAM, 1 MBIT, 128K X 8BIT, TSOP, 32 PINS, 2.2 V

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IS62WV1288FBLL-45TLI

Access Time	45 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	128K x 8
Memory Size	1 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.724 in
Package / Case	18.4 mm
Package / Case	32-TFSOP
Supplier Device Package	32-TSOP I
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.2 V
Write Cycle Time - Word, Page [custom]	45 ns
Write Cycle Time - Word, Page [custom]	45 ns

IS62WV1288 Series

Part	Technology	Memory Size	Memory Organization	Mounting Type	Memory Type	Memory Format	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Package / Case	Package / Case	Package / Case	Access Time	Supplier Device Package	Memory Interface	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case [x]	Package / Case [custom]	Package / Case [x]
ISSI, Integrated Silicon Solution Inc IS62WV1288FBLL-45TLI	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	2.2 V	3.6 V	45 ns	45 ns	0.724 in	18.4 mm	32-TFSOP	45 ns	32-TSOP I	Parallel	85 °C	-40 °C
ISSI, Integrated Silicon Solution Inc IS62WV1288DBLL-45TLI-TR	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	2.3 V	3.6 V	45 ns	45 ns	0.724 in	18.4 mm	32-TFSOP	45 ns	32-TSOP I	Parallel	85 °C	-40 °C
ISSI, Integrated Silicon Solution Inc IS62WV1288DALL-55BLI	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	1.65 V	2.2 V	55 ns	55 ns			36-TFBGA	55 ns	36-TFBGA (6x8)	Parallel	85 °C	-40 °C
ISSI, Integrated Silicon Solution Inc IS62WV1288FBLL-45TLI-TR	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	2.2 V	3.6 V	45 ns	45 ns	0.724 in	18.4 mm	32-TFSOP	45 ns	32-TSOP I	Parallel	85 °C	-40 °C
ISSI, Integrated Silicon Solution Inc IS62WV1288FBLL-45QLI	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	2.2 V	3.6 V	45 ns	45 ns	0.445 in 11.3 mm		32-SOIC	45 ns	32-SOP	Parallel	85 °C	-40 °C
ISSI, Integrated Silicon Solution Inc IS62WV1288BLL-55TLI	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	2.5 V	3.6 V	55 ns	55 ns	0.724 in	18.4 mm	32-TFSOP	55 ns	32-TSOP I	Parallel	85 °C	-40 °C
ISSI, Integrated Silicon Solution Inc IS62WV1288DBLL-45QLI	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	2.3 V	3.6 V	45 ns	45 ns	0.445 in 11.3 mm		32-SOIC	45 ns	32-SOP	Parallel	85 °C	-40 °C
ISSI, Integrated Silicon Solution Inc IS62WV1288FBLL-45HLI	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	2.2 V	3.6 V	45 ns	45 ns				45 ns	32-sTSOP I	Parallel	85 °C	-40 °C	0.465 "	32-TFSOP	11.8 mm
ISSI, Integrated Silicon Solution Inc IS62WV1288BLL-55TLI-TR	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	2.5 V	3.6 V	55 ns	55 ns	0.724 in	18.4 mm	32-TFSOP	55 ns	32-TSOP I	Parallel	85 °C	-40 °C
ISSI, Integrated Silicon Solution Inc IS62WV1288BLL-55HI-TR	SRAM - Asynchronous	1 Mbit	128K x 8	Surface Mount	Volatile	SRAM	2.5 V	3.6 V	55 ns	55 ns				55 ns	32-sTSOP I	Parallel	85 °C	-40 °C	0.465 "	32-TFSOP	11.8 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	624	$ 1.68
Newark	Each	1	$ 2.04

Description

General part information

IS62WV1288 Series

IS62WV1288FBLL-45TLI is a 128Kx8 low voltage, ultra-low power CMOS static RAM. It is a high-speed, 1Mbit static RAM organized as 128K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using a chip enable and output enable inputs. The active LOW write enable (WE#) controls both the writing and reading of the memory.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet