Discrete Semiconductor Products
MJE350STU
ObsoleteON Semiconductor
0.5 A, 300 V PNP BIPOLAR POWER TRANSISTOR
Discrete Semiconductor Products
MJE350STU
ObsoleteON Semiconductor
0.5 A, 300 V PNP BIPOLAR POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | MJE350STU |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max [Max] | 20 W |
| Supplier Device Package | TO-126-3 |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJE350%20(LEGACY%20FAIRCHILD) Series
The PNP Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.Replacement Active Part Number:MJE350
Documents
Technical documentation and resources