Zenode.ai Logo
Beta
SCT4045DWAHRTL
Discrete Semiconductor Products

SCT4026DWAHRTL

Active
Rohm Semiconductor

750V, 51A, 7-PIN SMD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

SCT4045DWAHRTL
Discrete Semiconductor Products

SCT4026DWAHRTL

Active
Rohm Semiconductor

750V, 51A, 7-PIN SMD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT4026DWAHRTL
Current - Continuous Drain (Id) @ 25°C51 A
Drain to Source Voltage (Vdss)750 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]94 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2320 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]34 mOhm
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]21 V
Vgs (Max) [Min]-4 V
Vgs(th) (Max) @ Id4.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 16.70
10$ 11.83
100$ 9.07
500$ 8.89
Digi-Reel® 1$ 16.70
10$ 11.83
100$ 9.07
500$ 8.89
Tape & Reel (TR) 1000$ 8.89
NewarkEach (Supplied on Cut Tape) 1$ 16.81
10$ 12.23
25$ 11.28
50$ 10.34
100$ 9.39
250$ 9.33
500$ 9.26
1000$ 9.25

Description

General part information

SCT4026DWAHR Series

AEC-Q101 qualified automotive grade product. SCT4026DWAHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

SCT4026DWAHR Data Sheet

Data Sheet

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

White Paper

SiC MOSFET Layout Design Considerations

Technical Article

Moisture Sensitivity Level

Package Information

Anti-Whisker formation

Package Information

Types and Features of Transistors

Application Note

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Two-Resistor Model for Thermal Simulation

Thermal Design

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

PCB Layout Thermal Design Guide

Thermal Design

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

How to Use PLECS Models

Technical Article

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

4 Steps for Successful Thermal Designing of Power Devices

White Paper

Method for Monitoring Switching Waveform

Schematic Design & Verification

What Is Thermal Design

Thermal Design

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

TO-263-7LA Taping Information

Package Information

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Compliance of the ELV directive

Environmental Data

TO-263-7LA Package Dimensions

Package Information

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

About Export Administration Regulations (EAR)

Export Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Thermal Design

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

Condition of Soldering

Package Information

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

Thermal Design

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

Thermal Design

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper