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Discrete Semiconductor Products
NXH200T120H3Q2F2STNG
ActiveON Semiconductor
80KW GEN-II Q2PACK-200A MODULE WITH TIM(NI-PLATED)/ BTRAY
Discrete Semiconductor Products
NXH200T120H3Q2F2STNG
ActiveON Semiconductor
80KW GEN-II Q2PACK-200A MODULE WITH TIM(NI-PLATED)/ BTRAY
Technical Specifications
Parameters and characteristics for this part
| Specification | NXH200T120H3Q2F2STNG |
|---|---|
| Configuration | Half Bridge |
| Current - Collector (Ic) (Max) [Max] | 330 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 35.615 nF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | False |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max [Max] | 679 W |
| Supplier Device Package | 56-PIM/Q2PACK |
| Supplier Device Package [x] | 93 |
| Supplier Device Package [y] | 47 |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 134.64 | |
| 10 | $ 116.91 | |||
| Newark | Each | 25 | $ 129.08 | |
| 50 | $ 127.20 | |||
| 100 | $ 119.72 | |||
| ON Semiconductor | N/A | 1 | $ 107.56 | |
Description
General part information
NXH200T120H3Q2F2STNG Series
The NXH200T120H3Q2 is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 200A/1200V half-bridge IGBTs with inverse diodes, two neutral point 100A/650V SiC diodes, two 150A/650V neutral point IGBTs with inverse diodes, two half-bridge 150A/1200V rectifiers and a negative temperature coefficient thermistor (NTC).
Documents
Technical documentation and resources