Discrete Semiconductor Products

DSS5240T-7

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 40 V, 100 MA, 600 MW, SOT-23, SURFACE MOUNT

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 40 V, 100 MA, 600 MW, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	DSS5240T-7

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	210 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	600 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

NRND = Not Recommended for New Design

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Supplier Device Package	Package / Case
Diodes Inc DSS5240T-7	40 V	100 nA	-55 °C	150 °C	210 hFE	2 A	600 mW	100 MHz	350 mV	PNP	Surface Mount	SOT-23-3	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NRND = Not Recommended for New Design

Technical documentation and resources