Specification	KSD5041QTA

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	230
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	750 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	20 V

KSD5041 Series

NPN Epitaxial Silicon Transistor

Part	Current - Collector (Ic) (Max)	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Transistor Type	Package / Case	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Mounting Type
ON Semiconductor KSD5041QTA	5 A	TO-92-3	1 V	750 mW	NPN	TO-226-3 TO-92-3	150 MHz	100 nA	230	20 V	150 °C	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3328	$ 0.09

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources