Specification	NTGS3136PT1G

Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1901 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTGS3136P Series

Single P-Channel Power MOSFET -20V, -5.8A, 33mΩ

Part	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
ON Semiconductor NTGS3136PT1G	700 mW	8 V	3.7 A	1 V	Surface Mount	SOT-23-6 Thin TSOT-23-6	6-TSOP	P-Channel	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	29 nC	1.8 V 4.5 V	1901 pF	33 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

-20V, -5.8A, Single P-Channel, TSOP-6

Technical documentation and resources