Specification	MCH6604-TL-E

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	50 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.57 nC
Input Capacitance (Ciss) (Max) @ Vds	6.6 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	7.8 Ohm
Supplier Device Package	6-MCPH
Technology	MOSFET (Metal Oxide)

MCH6604 Series

N-Channel Power MOSFET, 50V, 0.25A, 7.8 Ohm, Dual MCPH6

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]	FET Feature	Mounting Type	Technology
ON Semiconductor MCH6604-TL-E	1.57 nC	6.6 pF	250 mA	6-MCPH	150 °C	6-SMD Flat Leads	7.8 Ohm	50 V	2 N-Channel (Dual)	800 mW	Logic Level Gate	Surface Mount	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MCH6604 is N-Channel Power MOSFET, 50V, 0.25A, 7.8 Ohm, Dual MCPH6 for General-Purpose Switching Device Applications.