Specification	2SA2012-TD-E

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	420 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	3.5 W
Supplier Device Package	PCP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	210 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

2SA2012 Series

Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP

Part	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max)	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature
ON Semiconductor 2SA2012-TD-E	420 MHz	3.5 W	5 A	210 mV	TO-243AA	PCP	200	PNP	100 nA	30 V	Surface Mount	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SA2012 is Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP for DC-DC converter applications.