Specification	NVTYS007N04CTWG

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	674 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	38 W, 3.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.6 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NVTYS007N04C Series

MOSFET – Power, Single, N-Channel, 40 V, 8.6 mΩ, 49 A

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Grade	Technology	Rds On (Max) @ Id, Vgs	Qualification	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)
ON Semiconductor NVTYS007N04CTWG	40 V	-55 °C	175 ░C	8-LFPAK	3.5 V	Automotive	MOSFET (Metal Oxide)	8.6 mOhm	AEC-Q101	N-Channel	8-LFPAK56 SOT-1205	10 V	10 nC	Surface Mount	674 pF	3.1 W 38 W	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 40 V, 8.6 mΩ, 49 A

Technical documentation and resources