Discrete Semiconductor Products

PBSS4580PA,115

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PBSS4580PA - 80 V, 5.6 A NPN LOW V_CESAT (BISS) TRANSISTOR@EN-US DFN 3-PIN

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Discrete Semiconductor Products

Active

PBSS4580PA - 80 V, 5.6 A NPN LOW V_CESAT (BISS) TRANSISTOR@EN-US DFN 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4580PA,115

Current - Collector (Ic) (Max) [Max]	5.6 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150 hFE
Frequency - Transition	155 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-PowerUDFN
Power - Max [Max]	2.1 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	320 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Mounting Type	Frequency - Transition	Package / Case	Current - Collector Cutoff (Max) [Max]
Freescale Semiconductor - NXP PBSS4580PA,115	150 hFE	NPN	2.1 W	320 mV	5.6 A	80 V	150 °C	Surface Mount	155 MHz	3-PowerUDFN	100 nA

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General part information

Bipolar (BJT) Transistor NPN 80 V 5.6 A 155MHz 2.1 W Surface Mount 3-HUSON (2x2)

Technical documentation and resources