Discrete Semiconductor Products

BU406TU

Obsolete

NPN BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

Obsolete

NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BU406TU

Current - Collector (Ic) (Max) [Max]	7 A
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	60 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

NPN Bipolar Power Transistor

Part	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Mounting Type	Package / Case	Operating Temperature
ON Semiconductor BU406TU	TO-220-3	1 V	10 MHz	200 V	60 W	7 A	NPN	Through Hole	TO-220-3	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This Bipolar Power Transistor is a voltage, high speed transistor for horizontal deflection output stages of TVs and CRTs.