Specification	M10042040108X0ISAR

Clock Frequency	108 MHz
Memory Format	RAM
Memory Interface	SPI
Memory Organization	4, 1 M
Memory Size	512 kb
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.209 "
Package / Case [y]	5.3 mm
Supplier Device Package	8-SOIC
Technology	MRAM (Magnetoresistive RAM)
Voltage - Supply [Max]	2 V
Voltage - Supply [Min]	1.71 V

M10042040108 Series

Non-Volatile 4Mb High Performance MRAM, 1.8V

Part	Memory Size	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Memory Interface	Memory Format	Clock Frequency	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Technology	Package / Case [y]	Package / Case [x]
Renesas Electronics Corporation M10042040054X0IWAR	512 kb	Non-Volatile	85 °C	-40 °C	Surface Mount	8-DFN (5x6)	SPI	RAM	54 MHz	1 M 4	2 V	1.71 V	8-VDFN Exposed Pad	MRAM (Magnetoresistive RAM)
Renesas Electronics Corporation M10042040054X0ISAR	512 kb	Non-Volatile	85 °C	-40 °C	Surface Mount	8-SOIC	SPI	RAM	54 MHz	1 M 4	2 V	1.71 V	8-SOIC	MRAM (Magnetoresistive RAM)	5.3 mm	0.209 "
Renesas Electronics Corporation M10042040108X0IWAR	512 kb	Non-Volatile	85 °C	-40 °C	Surface Mount	8-DFN (5x6)	SPI	RAM	108 MHz	1 M 4	2 V	1.71 V	8-VDFN Exposed Pad	MRAM (Magnetoresistive RAM)
Renesas Electronics Corporation M10042040108X0ISAR	512 kb	Non-Volatile	85 °C	-40 °C	Surface Mount	8-SOIC	SPI	RAM	108 MHz	1 M 4	2 V	1.71 V	8-SOIC	MRAM (Magnetoresistive RAM)	5.3 mm	0.209 "
Renesas Electronics Corporation M10042040108X0IWAY	512 kb	Non-Volatile	85 °C	-40 °C	Surface Mount	8-DFN (5x6)		RAM	108 MHz	1 M 4	2 V	1.71 V	8-WDFN Exposed Pad	MRAM (Magnetoresistive RAM)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

M10042040108 Series

The M1004204 series is a 4Mbit high-performance non-volatile MRAM with speed up to 108MHz. The M1004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1004204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

Documents

Technical documentation and resources

M3004204, M3008204, M3016204, M1004204, M1008204, M1016204 Datasheet

Datasheet