Discrete Semiconductor Products

UG1006GH

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DIODE ARRAY GP 400V 10A TO220AB

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Discrete Semiconductor Products

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DIODE ARRAY GP 400V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	UG1006GH

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	22 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Supplier Device Package	Package / Case	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Mounting Type	Qualification
Taiwan Semiconductor Corporation UG1006GH	TO-220AB	TO-220-3	Automotive	400 V	1 Pair Common Cathode	10 µA	175 ░C	-55 °C	Standard	200 mA 500 ns	10 A	1.25 V	22 ns	Through Hole	AEC-Q101
Taiwan Semiconductor Corporation UG1006G	TO-220AB	TO-220-3		400 V	1 Pair Common Cathode	10 µA	175 ░C	-55 °C	Standard	200 mA 500 ns	10 A	1.25 V	22 ns	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 400 V 10A Through Hole TO-220-3

Technical documentation and resources

No documents available