2SC5200RTU

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NPN EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

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NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5200RTU

Current - Collector (Ic) (Max) [Max]	17 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	55
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	150 W
Supplier Device Package	TO-264-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	250 V

NPN Epitaxial Silicon Transistor

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Transistor Type	Package / Case	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]
ON Semiconductor 2SC5200RTU	Through Hole	150 °C	-50 °C	TO-264-3	NPN	TO-264-3 TO-264AA	30 MHz	5 µA	250 V	17 A	3 V	55	150 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	130	$ 2.31

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources