Discrete Semiconductor Products

NDS9953A

Obsolete

ON Semiconductor

MOSFET 2P-CH 30V 2.9A 8SOIC

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Discrete Semiconductor Products

NDS9953A

Obsolete

ON Semiconductor

MOSFET 2P-CH 30V 2.9A 8SOIC

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NDS9953A

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.8 V

NDS9952A Series

Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Feature	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Rds On (Max) @ Id, Vgs
ON Semiconductor NDS9952A	25 nC	80 mOhm	900 mW	N and P-Channel	320 pF	Surface Mount	30 V	2.8 V	Logic Level Gate	MOSFET (Metal Oxide)	2.9 A 3.7 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC
ON Semiconductor NDS9953A	25 nC		900 mW	2 P-Channel	350 pF	Surface Mount	30 V	2.8 V	Logic Level Gate	MOSFET (Metal Oxide)	2.9 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	130 mOhm
ON Semiconductor NDS9959	15 nC		900 mW	2 N-Channel (Dual)	250 pF	Surface Mount	50 V	4 V		MOSFET (Metal Oxide)	2 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	300 mOhm
ON Semiconductor NDS9953A	25 nC		900 mW	2 P-Channel	350 pF	Surface Mount	30 V	2.8 V	Logic Level Gate	MOSFET (Metal Oxide)	2.9 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	130 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	485	$ 0.62
		485	$ 0.62

Description

General part information

NDS9952A Series

These dual N- and P-channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Documents

Technical documentation and resources