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8-PQFN
Discrete Semiconductor Products

NTMFS011N15MC

Active
ON Semiconductor

POWER MOSFET, 150V SINGLE N CHANNEL 35A, 11.5M OHM IN POWER56 PACKAGE

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8-PQFN
Discrete Semiconductor Products

NTMFS011N15MC

Active
ON Semiconductor

POWER MOSFET, 150V SINGLE N CHANNEL 35A, 11.5M OHM IN POWER56 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFS011N15MC
Current - Continuous Drain (Id) @ 25°C78 A
Current - Continuous Drain (Id) @ 25°C10.7 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
Input Capacitance (Ciss) (Max) @ Vds3592 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.7 W, 147 W
Rds On (Max) @ Id, Vgs11.5 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 9.74
10$ 6.98
Digi-Reel® 1$ 9.74
10$ 6.98
Tape & Reel (TR) 3000$ 6.98
NewarkEach (Supplied on Cut Tape) 1$ 9.41
ON SemiconductorN/A 1$ 6.42

Description

General part information

NTMFS011N15MC Series

This N-Channel MV MOSFET is produced using advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.