No image
Discrete Semiconductor Products
EGP51B-E3/C
ActiveVishay General Semiconductor - Diodes Division
5A,100V,50NS,SUPERT,NOT FOR NEW DESIGN
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
EGP51B-E3/C
ActiveVishay General Semiconductor - Diodes Division
5A,100V,50NS,SUPERT,NOT FOR NEW DESIGN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | EGP51B-E3/C |
|---|---|
| Capacitance @ Vr, F | 117 pF |
| Current - Average Rectified (Io) | 5 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-201AD, Axial |
| Reverse Recovery Time (trr) | 50 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | DO-201AD |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 960 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
EGP51 Series
Diode 100 V 5A Through Hole DO-201AD
Documents
Technical documentation and resources