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Discrete Semiconductor Products

EGP51B-E3/C

Active
Vishay General Semiconductor - Diodes Division

5A,100V,50NS,SUPERT,NOT FOR NEW DESIGN

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Search across all available documentation for this part.

Discrete Semiconductor Products

EGP51B-E3/C

Active
Vishay General Semiconductor - Diodes Division

5A,100V,50NS,SUPERT,NOT FOR NEW DESIGN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationEGP51B-E3/C
Capacitance @ Vr, F117 pF
Current - Average Rectified (Io)5 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-201AD, Axial
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-201AD
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If960 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 4200$ 0.68
7000$ 0.65
9800$ 0.62
NewarkEach (Supplied on Full Reel) 4000$ 0.69
6000$ 0.67
10000$ 0.66

Description

General part information

EGP51 Series

Diode 100 V 5A Through Hole DO-201AD

Documents

Technical documentation and resources