Discrete Semiconductor Products

DMT2004UFG-7

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Diodes Inc

TRANSISTOR MOSFET N-CH 24V 70A 8-PIN POWERDI3333 T/R

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Discrete Semiconductor Products

DMT2004UFG-7

Active

Diodes Inc

TRANSISTOR MOSFET N-CH 24V 70A 8-PIN POWERDI3333 T/R

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMT2004UFG-7

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1683 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.45 V

DMT2004UFDF Series

N-Channel Enhancement Mode MOSFET

Part	Qualification	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Grade	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMT2004UFG-7	AEC-Q101	5 mOhm	Surface Mount	1.45 V	24 V	Automotive	53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	POWERDI3333-8	1683 pF	2.3 W	MOSFET (Metal Oxide)	70 A	8-PowerVDFN	N-Channel
Diodes Inc DMT2004UFDF-13	AEC-Q101		Surface Mount	1.45 V	24 V	Automotive	53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	U-DFN2020-6 (Type F)	1683 pF	12.5 W 800 mW	MOSFET (Metal Oxide)	14.1 A	6-UDFN Exposed Pad	N-Channel	6 mOhm
Diodes Inc DMT2004UFDF-7	AEC-Q101		Surface Mount	1.45 V	24 V	Automotive	53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	U-DFN2020-6 (Type F)	1683 pF	12.5 W 800 mW	MOSFET (Metal Oxide)	14.1 A	6-UDFN Exposed Pad	N-Channel	6 mOhm
Diodes Inc DMT2004UFV-7		5 mOhm	Surface Mount	1.45 V	24 V		53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	PowerDI3333-8 (Type UX)	1683 pF	1.2 W	MOSFET (Metal Oxide)	70 A	8-PowerVDFN	N-Channel
Diodes Inc DMT2004UFV-13		5 mOhm	Surface Mount	1.45 V	24 V		53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	PowerDI3333-8 (Type UX)	1683 pF	1.2 W	MOSFET (Metal Oxide)	70 A	8-PowerVDFN	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.60
		10	$ 0.52
		100	$ 0.36
		500	$ 0.30
		1000	$ 0.26
	Digi-Reel®	1	$ 0.60
		10	$ 0.52
		100	$ 0.36
		500	$ 0.30
		1000	$ 0.26
	Tape & Reel (TR)	2000	$ 0.23
		6000	$ 0.22
		10000	$ 0.20
Newark	Each (Supplied on Cut Tape)	1	$ 1.13
		10	$ 0.76
		25	$ 0.68
		50	$ 0.61
		100	$ 0.54
		250	$ 0.49
		500	$ 0.45
		1000	$ 0.42

Description

General part information

DMT2004UFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Documents

Technical documentation and resources

Recommended Soldering Techniques

Technical Document

Datasheet

Product Change Notice EN

Datasheet