Specification	NTLJS1102PTAG

Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1585 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	700 mW
Supplier Device Package	6-WDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	720 mV

NTLJS1102P Series

Power MOSFET 8V 8.1A 36 mOhm Single P-Channel WDFN2x2

Part	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTLJS1102PTAG	8 V	MOSFET (Metal Oxide)	25 nC	P-Channel	1585 pF	720 mV	700 mW	6-WDFN (2x2)	1.2 V 4.5 V	Surface Mount	6 V	3.7 A	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

µCool™ Power MOSFET, Single P-Channel, 8 V, 6.2 A, 0.036 Ω at 4.5 V, 1.9 W, 2.0 x 2.0 x 0.8 mm WDFN Package