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Technical Specifications
Parameters and characteristics for this part
| Specification | EMH11FHAT2R |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 hFE |
| Frequency - Transition | 250 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SOT-666, SOT-563 |
| Qualification | AEC-Q101 |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | EMT6 |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
EMH11 Series
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6
Documents
Technical documentation and resources