Discrete Semiconductor Products

IXTQ69N30P

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MOSFET N-CH 300V 69A TO3P

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Discrete Semiconductor Products

Active

MOSFET N-CH 300V 69A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ69N30P

Current - Continuous Drain (Id) @ 25°C	69 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	4960 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	49 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Littelfuse/Commercial Vehicle Products IXTQ69N30P	TO-3P	49 mOhm	69 A	180 nC	SC-65-3 TO-3P-3	5 V	10 V	Through Hole	N-Channel	300 V	500 W	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	4960 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 300 V 69A (Tc) 500W (Tc) Through Hole TO-3P

Technical documentation and resources