SQJ244EP-T1_GE3

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MOSFET 2N-CH 40V 20A PPAK SO8

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MOSFET 2N-CH 40V 20A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ244EP-T1_GE3

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	60 A, 20 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	20 nC
Gate Charge (Qg) (Max) @ Vgs	45 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max	48 W, 27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	11 mOhm, 4.5 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Current - Continuous Drain (Id) @ 25°C	Qualification	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Configuration	Supplier Device Package	Power - Max	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SQJ244EP-T1_GE3	-55 °C	175 ░C	Automotive	20 A 60 A	AEC-Q101	Surface Mount	20 nC	45 nC	MOSFET (Metal Oxide)	40 V	2 N-Channel (Dual) Asymmetrical	PowerPAK® SO-8 Dual Asymmetric	27 W 48 W	2.5 V	PowerPAK® SO-8 Dual	4.5 mOhm 11 mOhm

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General part information

Mosfet Array 40V 20A (Tc), 60A (Tc) 27W (Tc), 48W (Tc) Surface Mount PowerPAK® SO-8 Dual Asymmetric

Technical documentation and resources