NSVBC124EDXV6T1G
ObsoleteTRANS DIGITAL BJT NPN 50V 100MA 500MW AUTOMOTIVE AEC-Q101 6-PIN SOT-563 T/R
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NSVBC124EDXV6T1G
ObsoleteTRANS DIGITAL BJT NPN 50V 100MA 500MW AUTOMOTIVE AEC-Q101 6-PIN SOT-563 T/R
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Technical Specifications
Parameters and characteristics for this part
| Specification | NSVBC124EDXV6T1G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 60 hFE |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 500 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Supplier Device Package | SOT-563 |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NSBC124EDXV6 Series
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Documents
Technical documentation and resources
