Littelfuse Power Semi TO-263 3 1S2C image

Discrete Semiconductor Products

IXTA10P50P

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Littelfuse/Commercial Vehicle Products

DISC MOSFET P CHANNEL-POLAR TO-263D2/ TUBE

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Discrete Semiconductor Products

IXTA10P50P

Active

Littelfuse/Commercial Vehicle Products

DISC MOSFET P CHANNEL-POLAR TO-263D2/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA10P50P

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2840 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IXTA10N60P Series

Disc Mosfet P Channel-Polar TO-263D2

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXTA10P50P-TRL	2840 pF	Surface Mount	10 V	10 A	-55 °C	150 °C	1 Ohm	300 W	P-Channel	TO-263AA	50 nC	20 V	4 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 V
Littelfuse/Commercial Vehicle Products IXTA10P50P	2840 pF	Surface Mount	10 V	10 A	-55 °C	150 °C	1 Ohm	300 W	P-Channel	TO-263AA	50 nC	20 V	4 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 V
Littelfuse/Commercial Vehicle Products IXTA10N60P	1610 pF	Surface Mount	10 V	10 A	-55 °C	150 °C	740 mOhm		N-Channel	TO-263AA		30 V	5.5 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	32 nC	200 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.08
		10	$ 5.49
		100	$ 4.03
		500	$ 3.44
Newark	Each	100	$ 4.91
		100	$ 4.91
		500	$ 4.47
		500	$ 4.47
		1000	$ 3.94
		1000	$ 3.94
		2500	$ 3.67
		2500	$ 3.67

Description

General part information

IXTA10N60P Series

Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching

Documents

Technical documentation and resources