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8-PowerTDFN, 5 Leads
Discrete Semiconductor Products

NVMFWS2D3N04XMT1G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40 V, 121A, 2.35 MΩ

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8-PowerTDFN, 5 Leads
Discrete Semiconductor Products

NVMFWS2D3N04XMT1G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40 V, 121A, 2.35 MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFWS2D3N04XMT1G
Current - Continuous Drain (Id) @ 25°C29 A, 121 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1417 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN, 5 Leads
Power Dissipation (Max)63 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2.35 mOhm
Supplier Device Package4.9x5.9, 8-SOFL-WF, 5-DFNW
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.11
10$ 0.91
100$ 0.70
500$ 0.60
Digi-Reel® 1$ 1.11
10$ 0.91
100$ 0.70
500$ 0.60
Tape & Reel (TR) 1500$ 0.49
3000$ 0.46
7500$ 0.44
10500$ 0.42
ON SemiconductorN/A 1$ 0.54

Description

General part information

NVMFWS2D3N04XM Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.