CPC3708CTR
ActiveN-CH DEPL MOSFET 350V 14 OHMS SOT-89 TR/ TR
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CPC3708CTR
ActiveN-CH DEPL MOSFET 350V 14 OHMS SOT-89 TR/ TR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CPC3708CTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 mA |
| Drain to Source Voltage (Vdss) | 350 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0.35 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 110 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-243AA |
| Power Dissipation (Max) | 1.1 W |
| Rds On (Max) @ Id, Vgs | 14 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
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Description
General part information
CPC3708 Series
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications.