Discrete Semiconductor Products

FKG1020

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LOW RON MOSFET 100V/20A/0.033

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Discrete Semiconductor Products

Active

LOW RON MOSFET 100V/20A/0.033

Technical Specifications

Parameters and characteristics for this part

Specification	FKG1020

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature	Package / Case	FET Type	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs
Sanken Electric USA Inc. FKG1020	100 V	150 °C	TO-220-3 Full Pack	N-Channel	40 W	TO-220F	2200 pF	45 nC	20 V	4.5 V 10 V	2.5 V	MOSFET (Metal Oxide)	20 A	Through Hole	75 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 20A (Ta) 40W (Tc) Through Hole TO-220F

Technical documentation and resources