Discrete Semiconductor Products

SI1900DL-T1-E3

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MOSFET 2N-CH 30V 0.59A SC70-6

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 0.59A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1900DL-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	590 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	270 mW
Rds On (Max) @ Id, Vgs	480 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Technology	Power - Max [Max]	FET Feature	Current - Continuous Drain (Id) @ 25°C	Configuration	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI1900DL-T1-E3	6-TSSOP SC-88 SOT-363	1.4 nC	-55 °C	150 °C	480 mOhm	SC-70-6	Surface Mount	3 V	MOSFET (Metal Oxide)	270 mW	Logic Level Gate	590 mA	2 N-Channel (Dual)	30 V

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General part information

Mosfet Array 30V 590mA 270mW Surface Mount SC-70-6

Technical documentation and resources