Discrete Semiconductor Products

BUK7Y12-55B,115

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MOSFET N-CH 55V 61.8A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 55V 61.8A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y12-55B,115

Current - Continuous Drain (Id) @ 25°C	61.8 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2067 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	105 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Grade	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Qualification	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP BUK7Y12-55B,115	2067 pF	Automotive	LFPAK56 Power-SO8	Surface Mount	35.2 nC	55 V	20 V	MOSFET (Metal Oxide)	105 W	10 V	12 mOhm	AEC-Q101	SC-100 SOT-669	N-Channel	61.8 A	-55 °C	175 ░C
Freescale Semiconductor - NXP BUK7Y12-40EX	1039 pF	Automotive	LFPAK56 Power-SO8	Surface Mount		40 V	20 V	MOSFET (Metal Oxide)	65 W	10 V	12 mOhm	AEC-Q101	SC-100 SOT-669	N-Channel	52 A	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 61.8A (Tc) 105W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources