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Technical Specifications
Parameters and characteristics for this part
| Specification | NTD20N06-1G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 60 W, 1.88 W |
| Rds On (Max) @ Id, Vgs [Max] | 46 mOhm |
| Supplier Device Package | IPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
NTD20N06L Series
Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs (Max) | Technology | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | -55 °C | 175 ░C | N-Channel | 15 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | 20 A | 1.36 W 60 W | Surface Mount | 990 pF | 2 V | 60 V | 48 mOhm | 5 V | 32 nC | ||
ON Semiconductor | -55 °C | 175 ░C | N-Channel | 15 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | 20 A | 1.36 W 60 W | Surface Mount | 990 pF | 2 V | 60 V | 48 mOhm | 5 V | 32 nC | ||
ON Semiconductor | -55 °C | 175 ░C | N-Channel | 20 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | 20 A | 1.88 W 60 W | Surface Mount | 4 V | 60 V | 46 mOhm | 10 V | 1015 pF | 30 nC | ||
ON Semiconductor | -55 °C | 175 ░C | N-Channel | 20 V | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | IPAK | 20 A | 1.88 W 60 W | Through Hole | 4 V | 60 V | 46 mOhm | 10 V | 1015 pF | 30 nC | ||
ON Semiconductor | -55 °C | 175 ░C | N-Channel | 20 V | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | IPAK | 20 A | 1.88 W 60 W | Through Hole | 4 V | 60 V | 46 mOhm | 10 V | 1015 pF | 30 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTD20N06L Series
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Documents
Technical documentation and resources