Discrete Semiconductor Products

BXL4004-1E

Obsolete

N-CHANNEL POWER MOSFET, 40V, 100A, 3.9MOHM, TO-220-3L

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Discrete Semiconductor Products

Obsolete

N-CHANNEL POWER MOSFET, 40V, 100A, 3.9MOHM, TO-220-3L

Technical Specifications

Parameters and characteristics for this part

Specification	BXL4004-1E

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

N-Channel Power MOSFET, 40V, 100A, 3.9mOhm, TO-220-3L

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Mounting Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor BXL4001	6700 pF	20 V	1.75 W 75 W	12.4 mOhm	N-Channel	TO-220(LS)	75 V	85 A	115 nC	MOSFET (Metal Oxide)	TO-220-3	Through Hole	150 °C	10 V
ON Semiconductor BXL4004-1E		20 V	75 W	3.9 mOhm	N-Channel	TO-220-3	40 V	100 A		MOSFET (Metal Oxide)	TO-220-3	Through Hole	150 °C	4.5 V 10 V	8200 pF	140 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

BXL4004 is an N-Channel Power MOSFET, 40V, 100A, 3.9mOhm, TO-220-3L for General-Purpose Switching Device Application.

Technical documentation and resources