Discrete Semiconductor Products

NTP082N65S3HF

NRND

MOSFET, N-CH, 650V, 40A, 150DEG C, 313W ROHS COMPLIANT: YES

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Discrete Semiconductor Products

NRND

MOSFET, N-CH, 650V, 40A, 150DEG C, 313W ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NTP082N65S3HF

Drain to Source Voltage (Vdss)	650 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC
Input Capacitance (Ciss) (Max) @ Vds	3410 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	313 W
Rds On (Max) @ Id, Vgs	82 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package
ON Semiconductor NTP082N65S3HF	81 nC	TO-220-3	313 W	650 V	N-Channel	Through Hole	-55 °C	150 °C	3410 pF	82 mOhm	30 V	5 V	MOSFET (Metal Oxide)	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 40A (Tc) 313W (Tc) Through Hole TO-220-3

Technical documentation and resources