Discrete Semiconductor Products

SQM40016EM_GE3

LTB

MOSFET N-CH 40V 250A TO263-7

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Discrete Semiconductor Products

LTB

MOSFET N-CH 40V 250A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	SQM40016EM_GE3

Current - Continuous Drain (Id) @ 25°C	250 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	245 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	15000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	300 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	TO-263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Package / Case	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Grade	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SQM40016EM_GE3	3.5 V	D2PAK TO-263-7	MOSFET (Metal Oxide)	20 V	40 V	10 V	AEC-Q101	TO-263-7	300 W	-55 °C	175 ░C	245 nC	N-Channel	Automotive	Surface Mount	1 mOhm	250 A	15000 pF

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General part information

N-Channel 40 V 250A (Tc) 300W (Tc) Surface Mount TO-263-7

Technical documentation and resources