Discrete Semiconductor Products

S2K-M3/5BT

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DIODE GEN PURP 800V 1.5A DO214AA

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 1.5A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	S2K-M3/5BT

Capacitance @ Vr, F	16 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Supplier Device Package	Mounting Type	Qualification	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Grade	Current - Average Rectified (Io)	Speed	Speed	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division S2KHE3_A/H	1 µA	150 °C	-55 °C	2 µs	SMB	DO-214AA	Surface Mount	AEC-Q101	16 pF	800 V	Standard	DO-214AA SMB	Automotive	1.5 A	Standard Recovery >500ns	200 mA	1.15 V
Vishay General Semiconductor - Diodes Division S2K-M3/5BT	1 µA	150 °C	-55 °C	2 µs	SMB	DO-214AA	Surface Mount		16 pF	800 V	Standard	DO-214AA SMB		1.5 A	Standard Recovery >500ns	200 mA	1.15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 1.5A Surface Mount DO-214AA (SMB)

Technical documentation and resources