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onsemi-FMB5551 GP BJT Trans GP BJT NPN 160V 0.6A 700mW 6-Pin TSOT-23 T/R
Discrete Semiconductor Products

FDC610PZ

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, -4.9 A, -30 V, 0.036 OHM, -10 V, -2.2 V ROHS COMPLIANT: YES

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onsemi-FMB5551 GP BJT Trans GP BJT NPN 160V 0.6A 700mW 6-Pin TSOT-23 T/R
Discrete Semiconductor Products

FDC610PZ

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, -4.9 A, -30 V, 0.036 OHM, -10 V, -2.2 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC610PZ
Current - Continuous Drain (Id) @ 25°C4.9 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]24 nC
Input Capacitance (Ciss) (Max) @ Vds1005 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs42 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 0.12
6000$ 0.12
9000$ 0.12
15000$ 0.08
DigikeyCut Tape (CT) 1$ 0.55
10$ 0.47
100$ 0.33
500$ 0.25
1000$ 0.21
Digi-Reel® 1$ 0.55
10$ 0.47
100$ 0.33
500$ 0.25
1000$ 0.21
Tape & Reel (TR) 3000$ 0.18
6000$ 0.18
9000$ 0.16
30000$ 0.16
NewarkEach 1$ 0.57
10$ 0.44
100$ 0.30
500$ 0.24
1000$ 0.21
2500$ 0.19
12000$ 0.16
ON SemiconductorN/A 1$ 0.17

Description

General part information

FDC610PZ Series

This Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.