Discrete Semiconductor Products

BD243B-S

Obsolete

TRANS NPN 80V 6A TO220

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 80V 6A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	BD243B-S

Current - Collector Cutoff (Max) [Max]	700 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	2 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Transistor Type	Power - Max [Max]
Bourns Inc. BD243C-S	1.5 V	TO-220	15	700 µA	TO-220-3	100 V	150 °C	-65 °C	Through Hole	NPN	2 W
Bourns Inc. BD243B-S	1.5 V	TO-220	15	700 µA	TO-220-3	80 V	150 °C	-65 °C	Through Hole	NPN	2 W
Bourns Inc. BD243-S	1.5 V	TO-220	15	700 µA	TO-220-3	45 V	150 °C	-65 °C	Through Hole	NPN	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN 80 V 6 A 2 W Through Hole TO-220

Technical documentation and resources