Discrete Semiconductor Products

VS-16F120M

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DIODE GEN PURP 1.2KV 16A DO203AA

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 16A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-16F120M

Current - Average Rectified (Io)	16 A
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Reverse Recovery Time (trr)	29 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-4
Supplier Device Package	DO-203AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.23 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Speed [Min]	Speed	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division VS-16F120	1.2 kV	DO-4	DO-203AA	16 A	12 mA 1200 V	Standard	175 ░C	-65 C	DO-203AA DO-4 Stud	1.23 V	Chassis Stud Mount	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VS-16F120M	1.2 kV	DO-4	DO-203AA	16 A		Standard	175 ░C	-65 C	DO-203AA DO-4 Stud	1.23 V	Chassis Stud Mount		200 mA 500 ns	29 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 16A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources