Discrete Semiconductor Products

FDB5690

Obsolete

MOSFET N-CH 60V 32A TO263AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 32A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	FDB5690

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	58 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDB5690	58 W	TO-263 (D2PAK)	4 V	6 V 10 V	N-Channel	60 V	32 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	27 mOhm	20 V	MOSFET (Metal Oxide)	175 ░C	-65 °C	Surface Mount	1120 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 32A (Tc) 58W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources