Discrete Semiconductor Products

NDDP010N25AZ-1H

Obsolete

MOSFET N-CH 250V 10A IPAK/TP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 250V 10A IPAK/TP

Technical Specifications

Parameters and characteristics for this part

Specification	NDDP010N25AZ-1H

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	980 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	52 W, 1 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	IPAK/TP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NDDP010N25AZ-1H	30 V	Through Hole	1 W 52 W	420 mOhm	980 pF	IPAK TO-251-3 Short Leads TO-251AA	4.5 V	10 A	10 V	N-Channel	250 V	IPAK/TP	MOSFET (Metal Oxide)	16 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 10A (Ta) 1W (Ta), 52W (Tc) Through Hole IPAK/TP

Technical documentation and resources