Discrete Semiconductor Products

NTMS4935NR2G

Obsolete

POWER MOSFET 30V 16A 5.1 MOHM SINGLE N-CHANNEL SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

POWER MOSFET 30V 16A 5.1 MOHM SINGLE N-CHANNEL SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	NTMS4935NR2G

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52.1 nC
Input Capacitance (Ciss) (Max) @ Vds	3639 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	810 mW
Rds On (Max) @ Id, Vgs	5.1 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Power MOSFET 30V 16A 5.1 mOhm Single N-Channel SO-8

Part	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
ON Semiconductor NTMS4935NR2G	810 mW	Surface Mount	8-SOIC	MOSFET (Metal Oxide)	3639 pF	30 V	N-Channel	4.5 V 10 V	10 A	20 V	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	52.1 nC	2.5 V	5.1 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This is a 30 V N-Channel Power MOSFET.

Technical documentation and resources